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| SOT23 SILICON VARIABLE CAPACITANCE DIODES ISSUE 5 - JANUARY 1998 FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance (IR Typically <200pA at 25V) ZC830/A/B to ZC836/A/B 1 1 3 2 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Forward Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL IF P tot T j:T stg MAX 200 330 SOT23 UNIT mA mW C -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb =25C) PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Temperature Coefficient of Capacitance SYMBOL VBR IR MIN 25 0.2 0.03 10 0.04 TYP MAX UNIT CONDITIONS V nA %/C I R =10A V R=20V V R=3V, f=1MHz TUNING CHARACTERISTICS (at Tamb =25C) PART NO Nominal Capacitance (pF) VR=2V, f=1MHz MIN ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A 9.0 13.5 19.8 29.7 42.3 61.2 90.0 NOM 10.0 15.0 22.0 33.0 47.0 68.0 100.0 MAX 11.0 16.5 24.2 36.3 51.7 74.8 110.0 Minimum Q @ VR=3V f=50MHz 300 300 200 200 200 100 100 Capacitance Ratio C2 / C20 at f=1MHz MIN 4.5 4.5 5.0 5.0 5.0 5.0 5.0 MAX 6.0 6.0 6.5 6.5 6.5 6.5 6.5 Note: No suffix 20% (e.g. ZC830), suffix B 5% (e.g. ZC830B) Spice parameter data is available upon request for this device ZC830/A/B to ZC836/A/B PARTMARKING DETAILS PART NO ZC830 ZC831 ZC832 ZC833 ZC834 ZC835 ZC836 PARTMARK J1S J3S J4S J2S J5S J6S J7S PART NO ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A PARTMARK J1A J3A J4A J2A J5A J6A J7A PART NO ZC830B ZC831B ZC832B ZC833B ZC834B ZC835B ZC836B PARTMARK J1B J3B J4B J2B J5B J6B J7B 200 100 Diode Capacitance (pF) 836A 10 835A 834A 833A 832A 831A 830A 1 1 10 100 Reverse Voltage (Volts) Diode Capacitance |
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